Phase change memory cell with first and second transition temperature portions
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United States of America Patent
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Mar 8, 2011
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N/A
app pub date -
Nov 6, 2008
filing date -
Nov 28, 2005
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Abstract
A phase change memory cell includes first and second electrodes having generally coplanar surfaces spaced apart by a gap and a phase change bridge electrically coupling the first and second electrodes. The phase change bridge may extend over the generally coplanar surfaces and across the gap. The phase change bridge has a higher transition temperature bridge portion and a lower transition temperature portion. The lower transition temperature portion comprises a phase change region which can be transitioned from generally crystalline to generally amorphous states at a lower temperature than the higher transition temperature portion. A method for making a phase change memory cell is also disclosed.
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