Methods of varying read threshold voltage in nonvolatile memory
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United States of America Patent
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Mar 8, 2011
Grant Date -
May 29, 2008
app pub date -
Nov 3, 2006
filing date -
Nov 3, 2006
priority date (Note) -
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Abstract
Data is read from a nonvolatile memory array using one or more read voltages that are adjusted during memory life. Programming target voltages and read voltages may be adjusted together over memory life to map memory states to an increasingly wide threshold window. Individual memory states are mapped to sub-ranges that are made wider, reducing errors.
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