Narrow width metal oxide semiconductor transistor
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United States of America Patent
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Mar 15, 2011
Grant Date -
Jul 23, 2009
app pub date -
Mar 31, 2009
filing date -
Dec 29, 2005
priority date (Note) -
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Abstract
of the channel as an active area added to the drain area. When the structure of the transistor having the additional active areas is applied to NMOS and PMOS transistors, a driving current is represented as 107.27% and 103.31%, respectively. Accordingly, the driving currents of both PMOS and NMOS transistors are enhanced.
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