Method of reducing coupling between floating gates in nonvolatile memory

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United States of America Patent

PATENT NO 7910434
APP PUB NO 20100047979A1
SERIAL NO

12567257

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Abstract

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A nonvolatile memory array includes floating gates that have an inverted-T shape in cross section along a plane that is perpendicular to the direction along which floating cells are connected together to form a string. Adjacent strings are isolated by shallow trench isolation structures.

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Patent OwnerAddress
SANDISK TECHNOLOGIES INC951 SANDISK DRIVE LEGAL DEP MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chien, Henry San Jose, US 83 4477
Fong, Yupin Kawing Fremont, US 47 3649
Higashitani, Masaaki Cupertino, US 276 5141
Horiuchi, Hidetaka Nagoya, JP 7 96
Lutze, Jeffrey W San Jose, US 96 3674
Matamis, George San Jose, US 120 3560
Mokhlesi, Nima Los Gatos, US 194 9770
Pham, Tuan San Jose, US 85 2485

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