Silicide-silicon oxide-semiconductor antifuse device and method of making
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United States of America Patent
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Mar 29, 2011
Grant Date -
Jul 15, 2010
app pub date -
Jan 13, 2010
filing date -
Mar 13, 2002
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Abstract
An antifuse contains a first silicide layer, a grown silicon oxide antifuse layer on a first surface of the first silicide layer, and a first semiconductor layer having a first surface in contact with the antifuse layer.
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