Memory cell device and programming methods
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United States of America Patent
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Apr 5, 2011
Grant Date -
Jun 24, 2010
app pub date -
Mar 2, 2010
filing date -
Feb 5, 2007
priority date (Note) -
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Abstract
A memory device including a memory cell comprising phase change material is described along with methods for programming the memory device. A method for programming disclosed herein includes determining a data value for the memory cell, and applying a pulse pair to store the data value. The pulse pair includes an initial pulse having a pulse shape adapted to preset the phase change material in the memory cell to a normalizing resistance state, and a subsequent pulse having a pulse shape adapted to set the phase change material from the normalizing resistance state to a resistance corresponding to the determined data value.
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