Multi bit flash memory device and method of programming the same

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United States of America Patent

PATENT NO 7920420
APP PUB NO 20080137416A1
SERIAL NO

12000209

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Abstract

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A method of programming a flash memory device may include dividing a plurality of memory cells into a plurality of groups according to a threshold voltage state, the memory cells configured to store multi bit data. The plurality of memory cells may be programmed with a program data. The memory cells of the divided groups may be respectively selected and programmed by divided group during the programming of the plurality of memory cells.

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Patent Owner(s)

Patent OwnerAddress
SAMSUNG ELECTRONICS CO LTD129 SAMSUNG-RO YEONGTONG-GU SUWON-SI GYEONGGI-DO 16677 16677

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lee, Seung-Jae Hwaseong-si, KR 228 2335

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