Method of predicting internal gettering behavior in silicon substrates and storage medium storing program for predicting internal gettering behavior
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United States of America Patent
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Apr 5, 2011
Grant Date -
Oct 15, 2009
app pub date -
Jun 5, 2006
filing date -
Sep 2, 2005
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Abstract
in the silicon substrate, a density N of oxygen precipitates, a radius R of the oxygen precipitates, internal gettering heat treatment temperature T, internal gettering heat treatment time t, and a concentration C(t) of iron (Fe) remaining in the silicon substrate after a heat treatment. In the prediction of internal gettering behavior in the silicon substrate, an arithmetic expression is added considering a process in which nuclei of a contaminant heavy metal silicide are generated on the surface of the oxygen precipitates, and a process in which the contaminant heavy metal is gettered by the oxygen precipitates having the contaminant heavy metal silicide nuclei generated on the surface thereof. This invention is also applicable for internal gettering of a contaminant heavy metal other than iron (Fe), such as copper (Cu), nickel (Ni) or the like.
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