Phase change memory element with a peripheral connection to a thin film electrode
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United States of America Patent
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Apr 12, 2011
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N/A
app pub date -
Jun 26, 2009
filing date -
Mar 30, 2006
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Abstract
A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.
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