Method of manufacturing a laterally diffused metal oxide semiconductor device
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United States of America Patent
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Apr 19, 2011
Grant Date -
Dec 13, 2001
app pub date -
Jan 4, 2001
filing date -
Jan 5, 2000
priority date (Note) -
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Abstract
A method of manufacturing a laterally diffused metal oxide semiconductor (LDMOS) device, and an integrated circuit associated therewith. The method includes forming a lightly-doped source/drain region with a first dopant, the lightly-doped source/drain region located between first and second isolation structures. The method further includes creating a gate over the lightly-doped source/drain region. In one advantageous embodiment of the present invention, the method further includes diffusing a second dopant at least partially across the lightly-doped source/drain region and under the gate to form a first portion of a channel.
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