Phase change memory cell with vacuum spacer

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7928421
APP PUB NO 20070246699A1
SERIAL NO

11409256

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Abstract

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A memory device. The device includes first and second electrode members, in spaced relation on a substrate. A phase change element lies in electrical contact with the first and second electrode elements and spans the space separating them. The phase change element includes two segments, each in contact with one of the electrode elements. The segments are fused together at a location between the two electrodes such that the fused area has a smaller cross-sectional area than does the remainder of the phase change element. The electrodes, the substrate and the phase change element define a chamber containing a vacuum.

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Patent Owner(s)

Patent OwnerAddress
MACRONIX INTERNATIONAL CO LTDHSINCHU

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Lung, Hsiang Lan Elmsford, US 118 7130

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