P-channel power MIS field effect transistor and switching circuit
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United States of America Patent
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Apr 19, 2011
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Sep 28, 2009
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May 26, 2003
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Abstract
In a P-channel power MIS field effect transistor formed on a silicon surface having substantially a (110) plane, a gate insulation film is used which provides a gate-to-source breakdown voltage of 10 V or more, and planarizes the silicon surface, or contains Kr, Ar, or Xe.
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