Fully self-aligned pore-type memory cell having diode access device
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United States of America Patent
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Apr 26, 2011
Grant Date -
Jan 28, 2010
app pub date -
Jul 22, 2008
filing date -
Jul 22, 2008
priority date (Note) -
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Abstract
Memory devices are described along with methods for manufacturing. A memory device as described herein includes a plurality of memory cells. Each memory cell in the plurality of memory cells comprises a diode comprising doped semiconductor material and a dielectric spacer on the diode and defining an opening, the dielectric spacer having sides self-aligned with sides of the diode. Each memory cell further comprises a memory element on the dielectric spacer and including a portion within the opening contacting a top surface of the diode.
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