Method for fabricating a liquid crystal display device wherein the storage electrode is simultaneously formed with the active pattern
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United States of America Patent
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Apr 26, 2011
Grant Date -
Feb 2, 2006
app pub date -
Jun 29, 2005
filing date -
Jul 28, 2004
priority date (Note) -
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Abstract
A fabrication method of an LCD includes providing a substrate having a first region and a second region; forming a storage line in the first region and an active pattern in the second region of the substrate; forming a first insulation film on the substrate; forming a gate electrode and a pixel electrode on the substrate; forming a second insulation film on the substrate; and forming a source electrode and a drain electrode, the source electrode connected to a source region via a contact hole and the drain electrode connected to a drain region through the contact hole. The fabrication method may obtain a sufficient storage capacitance with a simplified process. The number of masks used for fabrication of a thin film transistor (TFT) may be reduced.
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