One-transistor, one-resistor, one-capacitor phase change memory
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United States of America Patent
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Apr 26, 2011
Grant Date -
Nov 18, 2010
app pub date -
May 15, 2009
filing date -
May 15, 2009
priority date (Note) -
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Abstract
Memory devices and methods for operating such devices are described herein. A memory cell as described herein comprises a transistor electrically coupled to first and second access lines. A programmable resistance memory element is arranged along a current path between the first and second access lines. A capacitor is electrically coupled to the current path between the first and second access lines.
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