Sensing circuit of a phase change memory and sensing method thereof
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United States of America Patent
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Apr 26, 2011
Grant Date -
Dec 25, 2008
app pub date -
Dec 31, 2007
filing date -
Jun 25, 2007
priority date (Note) -
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Abstract
A sensing circuit of a phase change memory. The sensing circuit comprises a data current source and a reference current source, a storage memory device and a reference memory device, a storage switch and a reference switch, an auxiliary current source and a comparator. First terminals of the storage memory device and the reference memory device are respectively coupled to the data current source and the reference current source. The storage switch and the reference switch are respectively coupled to second terminals of the storage memory device and the reference memory device. The auxiliary current source is dynamically coupled to the first terminals of the storage memory device and the reference memory device. The comparator is coupled to the first terminals of the storage memory device and the reference memory device.
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