Self-converging bottom electrode ring
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United States of America Patent
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May 3, 2011
Grant Date -
Aug 27, 2009
app pub date -
Feb 25, 2008
filing date -
Feb 25, 2008
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method and memory cell including self-converged bottom electrode ring. The method includes forming a step spacer, a top insulating layer, an intermediate insulating layer, and a bottom insulating layer above a substrate. The method includes forming a step spacer within the top insulating layer and the intermediate insulating layer. The step spacer size is easily controlled. The method also includes forming a passage in the bottom insulating layer with the step spacer as a mask. The method includes forming bottom electrode ring within the passage comprising a cup-shaped outer conductive layer within the passage and forming an inner insulating layer within the cup-shaped outer conductive layer. The method including forming a phase change layer above the bottom electrode ring and a top electrode above the bottom electrode ring.
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