Forming low dielectric constant dielectric materials
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United States of America Patent
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May 3, 2011
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N/A
app pub date -
Mar 5, 2009
filing date -
Mar 5, 2009
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Abstract
In some embodiments, a damascene structure may be formed with metal lines separated by a dielectric layer. Portions of the dielectric layer may be ion implanted with carbon and/or inert species to lower selectively the dielectric constant, while leaving the bulk of the dielectric layer unaffected by the implant. As a result, suitably low dielectric constants can be achieved in damascene dielectric layers with sufficient mechanical strength.
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