Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
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United States of America Patent
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May 3, 2011
Grant Date -
Dec 22, 2005
app pub date -
Feb 4, 2005
filing date -
Jun 18, 2004
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Abstract
Methods and systems selectively irradiate structures on or within a semiconductor substrate using a plurality of laser beams. The structures are arranged in a row extending in a generally lengthwise direction. The method generates a first laser beam that propagates along a first laser beam axis that intersects the semiconductor substrate and a second laser beam that propagates along a second laser beam axis that intersects the semiconductor substrate. The method directs the first and second laser beams onto non-adjacent first and second structures in the row. The method moves the first and second laser beam axes relative to the semiconductor substrate along the row substantially in unison in a direction substantially parallel to the lengthwise direction of the row.
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