Semiconductor device
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United States of America Patent
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May 3, 2011
Grant Date -
Sep 4, 2008
app pub date -
Oct 18, 2005
filing date -
Oct 22, 2004
priority date (Note) -
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Abstract
The present invention provides a semiconductor device which has a storage element having a simple structure in which an organic compound layer is sandwiched between a pair of conductive layers and a manufacturing method of such a semiconductor device. With this characteristic, a semiconductor device having a storage circuit which is nonvolatile, additionally recordable, and easily manufactured and a manufacturing method of such a semiconductor device are provided. A semiconductor device according to the present invention has a plurality of field-effect transistors provided over an insulating layer and a plurality of storage elements provided over the plurality of field-effect transistors. Each of the plurality of field-effect transistors uses a single-crystal semiconductor layer as a channel portion and each of the plurality of storage elements is an element in which a first conductive layer, an organic compound layer, and a second conductive layer are stacked in order.
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