Inhibitors for selective deposition of silicon containing films
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United States of America Patent
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May 10, 2011
Grant Date -
Apr 30, 2009
app pub date -
Oct 26, 2007
filing date -
Oct 26, 2007
priority date (Note) -
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Abstract
A method for depositing a single crystalline silicon film comprises: providing a substrate disposed within a chamber; introducing to the chamber under chemical vapor deposition conditions a silicon precursor, a chlorine-containing etchant and an inhibitor source for decelerating reactions between the silicon precursor and the chlorine-containing etchant; and selectively depositing a doped crystalline Si-containing film onto the substrate.
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