Semiconductor device and method of manufacturing the same
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United States of America Patent
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May 17, 2011
Grant Date -
Jun 14, 2007
app pub date -
Dec 12, 2006
filing date -
Dec 14, 2005
priority date (Note) -
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Abstract
Embodiments relate to a semiconductor device and a method for manufacturing the same. According to embodiments, a semiconductor device may include an LDD which may include a space having a first width and may be formed in a semiconductor substrate, a channel area which may be formed in the semiconductor substrate within a space having a first width, a gate insulating layer which has a width wider than the first width and may be formed on an upper side of the channel area on the semiconductor substrate, a gate which may be formed with the first width on the gate insulating layer, and a spacer including a first spacer formed at both sides of the gate insulating layer and a second spacer formed at sidewalls of the gate.
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