Advanced VLSI metallization
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United States of America Patent
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May 17, 2011
Grant Date -
Nov 18, 2004
app pub date -
Jun 18, 2004
filing date -
Mar 14, 1997
priority date (Note) -
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Abstract
A four layer interconnect structure is disclosed which includes a bottom conductive reactive layer such as titanium, a conductive barrier layer, such as titanium nitride, a conductive layer, such as aluminum-copper alloy, and a top conductive barrier layer, such as titanium nitride. The interconnection structure can be fabricated using conventional sputter deposition technology. The resulting interconnection structure provides a highly conductive thin film structure that provides good contact to tungsten plugs with small contact dimensions, good patternability on fine lines, and good reliability.
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