Semiconductor device
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United States of America Patent
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May 17, 2011
Issued Date -
N/A
app pub date -
Dec 21, 2006
filing date -
Dec 22, 2005
priority date (Note) -
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Abstract
A semiconductor device is discloses that includes an n-type semiconductor substrate; an alternating conductivity type layer on semiconductor substrate, the alternating conductivity type layer including n-type drift regions and p-type partition regions arranged alternately; p-type channel regions on the alternating conductivity type layer; and trenches formed from the surfaces of the p-type channel regions down to respective n-type drift regions. The bottom of each trench is over the pn-junction between the p-type partition region and the n-type drift region. The semiconductor device facilitates preventing the on-resistance from increasing, obtaining a higher breakdown voltage, and reducing the variations caused in the characteristics thereof.
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