Ternary content addressable memory having reduced leakage effects
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United States of America Patent
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May 17, 2011
Grant Date -
Oct 28, 2010
app pub date -
Apr 28, 2009
filing date -
Apr 28, 2009
priority date (Note) -
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Abstract
A column of ternary content addressable memory (TCAM) cells includes a bit line pair that is twisted at a location at or near the center of the column. Data is written to (and read from) TCAM cells located above the twist location with a first bit line polarity. Data is written to (and read from) TCAM cells located below the twist location with a second bit line polarity, opposite the first bit line polarity. As a result, read leakage currents introduced by TCAM cells storing ‘Don't Care’ values are reduced.
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