Method for fabricating a semiconductor on insulator substrate with reduced Secco defect density

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United States of America Patent

PATENT NO 7947571
APP PUB NO 20100052092A1
SERIAL NO

12478063

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Abstract

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and the thinning is an oxidation step conducted at a temperature of less than 925° C.

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Patent Owner(s)

Patent OwnerAddress
S O I TEC SILICON ON INSULATOR TECHNOLOGIESFRENCH BERNINI BERNIN ISERE

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Abbadie, Alexandra Le Versoud, FR 8 24
Capello, Luciana Grenoble, FR 8 78
Kononchuk, Oleg Theys, FR 89 317
Neyret, Eric Sassenage, FR 28 236
Schwarzenbach, Walter Saint Nazaire Eymes, FR 66 718

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