Flash memory device and method for manufacturing the same

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 7948022
APP PUB NO 20090134447A1
SERIAL NO

12362465

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A flash memory device, and a manufacturing method thereof, having advantages of protecting sidewalls of a floating gate and a control gate and preventing a recess of an active area of a source region are provided. The method includes forming a tunneling oxide layer on an active region of a semiconductor substrate, forming a floating gate, a gate insulation layer, and a control gate on the tunneling oxide layer, forming insulation sidewall spacers on sides of the floating gate and the control gate, and removing at least portions of the tunneling oxide layer and the device isolation layer so as to expose the active region.

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Patent Owner(s)

  • DONGBU ELECTRONICS CO., LTD.;INPHI CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Yeong-Sil Suwon, KR 3 2

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