Method of programming a multi level cell
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United States of America Patent
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May 24, 2011
Grant Date -
Feb 3, 2011
app pub date -
Oct 11, 2010
filing date -
Sep 10, 2007
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Abstract
A method of programming a multi level cell in a non-volatile memory device includes: performing a program operation on main cells and indicator cells; performing a first verifying operation on the main cells and the indicator cells based on a first verifying voltage; performing repeatedly the program operation and the first verifying operation until a threshold voltage of a first cell of the indicator cells is higher than the first verifying voltage; and performing a second verifying operation on the main cells and the indicator cells based on a second verifying voltage when the threshold voltage of the first cell is higher than the first verifying voltage.
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