Phase change memory array circuits and methods of manufacture
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United States of America Patent
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May 31, 2011
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N/A
app pub date -
Nov 23, 2010
filing date -
Dec 18, 2006
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Abstract
A memory comprising: a plurality of base layers including plurality of switches; a phase-change material layer; a bit line layer arranged between and coupled to the plurality of base layers and the phase-change material layer; a word line layer arranged between and coupled to the plurality of base layers and the phase-change material layer; and a voltage source layer comprising a plurality of independent voltage source segments, wherein the plurality of independent voltage source segments are in communication with the plurality of switches.
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