Memory cell with memory element contacting ring-shaped upper end of bottom electrode
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United States of America Patent
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Jun 7, 2011
Grant Date -
Aug 28, 2008
app pub date -
Feb 27, 2007
filing date -
Feb 27, 2007
priority date (Note) -
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Abstract
A memory cell includes a bottom electrode, a top electrode and a memory element switchable between electrical property states by the application of energy. The bottom element includes lower and upper parts. The upper part has a generally ring-shaped upper end surrounding a non-conductive central region. The lateral dimension of the lower part is longer, for example twice as long, than the lateral dimension of the ring-shaped upper end. The lower part is a non-perforated structure. The memory element is positioned between and in electrical contact with the top electrode and the ring-shaped upper end of the second part of the bottom electrode. In some examples the ring-shaped upper end has a wall thickness at the memory element of 2-10 nm. A manufacturing method is also discussed.
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