Flash memory programming power reduction

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United States of America Patent

PATENT NO 7957204
SERIAL NO

11229667

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Abstract

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A non-volatile memory device includes an array of non-volatile memory cells. When programming the memory cells, a voltage supply source is used that includes multiple independent charge pumps. The independent charge pumps supply the programming voltage to different ones of bit lines in the array of memory cells. Using multiple charge pumps tends to reduce output voltage fluctuations and thereby reduce power loss.

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Patent Owner(s)

  • MONTEREY RESEARCH, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chandra, Sachit Sunnyvale, US 9 55
Lee, Aaron Mountain View, US 84 2993
Wang, Guowei Cupertino, US 28 173
Wu, Yonggang Santa Clara, US 43 1172
Yang, Nian Mountain View, US 94 734

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