Semiconductor heterostructure nanowire devices
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United States of America Patent
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Jun 14, 2011
Grant Date -
Nov 26, 2009
app pub date -
Apr 22, 2009
filing date -
Apr 24, 2008
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Abstract
Nanowire devices comprising core-shell or segmented nanowires are provided. In these nanowire devices, strain can be used as a tool to form metallic portions in nanowires made from compound semiconductor materials, and/or to create nanowires in which embedded quantum dots experience negative hydrostatic pressure or high positive hydrostatic pressure, whereby a phase transitions may occur, and/or to create exciton crystals.
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