Hybrid programming methods and systems for non-volatile memory storage elements

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United States of America Patent

PATENT NO 7961511
APP PUB NO 20080084761A1
SERIAL NO

11535452

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Abstract

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A hybrid method of programming a non-volatile memory cell to a final programmed state is described. The method described is a more robust protocol suitable for reliably programming selected memory cells while eliminating programming disturbs. The hybrid method comprises programming the non-volatile memory cell to a first state according to a first coarse programming mechanism, and programming the non-volatile memory cell according to a second different more precise programming mechanism thereby completing the programming of the non-volatile memory cell to the final programmed state. Additionally, the described method is particularly advantageous for programming multilevel chips.

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Patent Owner(s)

Patent OwnerAddress
SANDISK TECHNOLOGIES INC951 SANDISK DRIVE LEGAL DEP MILPITAS CA 95035

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Changyuan Sunnyvale, US 42 539
Dong, Yingda Sunnyvale, US 256 5230
Lee, Dana Saratoga, US 144 4255
Lutze, Jeffrey San Jose, US 32 842

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