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• 15 United States
• 10 France
• 8 Japan
• 7 China
• 5 Korea
• 2 Other

Patent Owner(s)

Patent Owner	Address
HITACHI CHEMICAL COMPANY LTD	9-2 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 1006606 ?1006606

International Classification(s)

• B24B:MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR PO....

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• [Patents Count]

Inventor(s)

Inventor Name	Address	# of filed Patents	Total Citations
Ashizawa, Toranosuke	Ibaraki-ken, JP	38	314
Kurata, Yasushi	Ibaraki-ken, JP	64	744
Matsuzawa, Jun	Ibaraki-ken, JP	31	312
Ootuki, Yuuto	Ibaraki-ken, JP	12	130
Tanno, Kiyohito	Ibaraki-ken, JP	13	189
Terazaki, Hiroki	Ibaraki-ken, JP	24	239
Yoshida, Masato	Ibaraki-ken, JP	214	2996

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Maintenance Fees

Fee	Large entity fee	small entity fee	micro entity fee	due date

Fee	Large entity fee	small entity fee	micro entity fee
Surcharge after expiration - Late payment is unavoidable	$700.00	$350.00	$175.00
Surcharge after expiration - Late payment is unintentional	$1,640.00	$820.00	$410.00

DATE PUBLISHED	PUBLICATION/PATENT NO.	PUBLICATION TYPE
June 21, 2011	US,7963825,B2   US7963825B2	GRANTED PATENT AS SECOND PUBLICATION
November 06, 2008	US,20080271383,A1   US20080271383A1	FIRST PUBLISHED PATENT APPLICATION

Full Text

US Patent No: 7963825

Abrasive, method of polishing target member and process for producing semiconductor device

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