Predictive programming in non-volatile memory
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United States of America Patent
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Jun 21, 2011
Grant Date -
Apr 22, 2010
app pub date -
Dec 29, 2009
filing date -
Apr 10, 2007
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Abstract
In a nonvolatile memory having an array of memory cells, wherein the memory cells are individually programmable to one of a range of threshold voltage levels, there is provided a predictive programming mode in which a predetermined function predicts what programming voltage level needs to be applied in order to program a given memory cell to a given target threshold voltage level. In this way, no verify operation needs to be performed, thereby greatly improving the performance of the programming operation. In a preferred embodiment, the predetermined function is linear and is calibrated for each memory cell under programming by one or more checkpoints. The checkpoint is an actual programming voltage that programs the memory cell in question to a verified designated threshold voltage level.
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