Fabrication process of a semiconductor device to form ultrafine patterns smaller than resolution limit of exposure apparatus
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United States of America Patent
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Jun 28, 2011
Grant Date -
May 29, 2008
app pub date -
Nov 27, 2007
filing date -
Nov 29, 2006
priority date (Note) -
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Abstract
A method for fabricating an electron device on a substrate includes the steps of forming a dummy film over the substrate such that the dummy film covers a device region of the substrate and an outer region of the substrate outside the device region, forming a dummy pattern by patterning the dummy film such that the dummy pattern has a first height in the device region and a second height smaller than the first height in the outer region, forming another film over the substrate such that the film covers the dummy pattern in the device region and in the outer region with a shape conformal to a cross-sectional shape of the dummy pattern, and applying an anisotropic etching process acting generally perpendicularly to the substrate such that a surface of the substrate is exposed in the device region and in the outer region.
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