Memory device manufacturing method
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United States of America Patent
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Jul 5, 2011
Grant Date -
Sep 24, 2009
app pub date -
May 20, 2009
filing date -
Apr 17, 2006
priority date (Note) -
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Abstract
A method for making a memory device includes providing a dielectric material, having first and second upwardly and inwardly tapering surfaces and a surface segment connecting the first and second surfaces. First and second electrodes are formed over the first and second surfaces. A memory element is formed over the surface segment to electrically connect the first and second electrodes.
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