Plasma processing apparatus and method of suppressing abnormal discharge therein
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United States of America Patent
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Jul 5, 2011
Grant Date -
Mar 15, 2007
app pub date -
Sep 1, 2006
filing date -
Sep 6, 2005
priority date (Note) -
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Abstract
In a plasma processing apparatus having an electrostatic chuck for holding a semiconductor wafer by an electrostatic adsorption force and a DC power supply for applying an electrostatic adsorption voltage to the electrostatic chuck, abnormal discharge in plasma is suppressed by providing the apparatus with a signal detector that detects a foresee signal that foresees occurrence of abnormal discharge in plasma, and a controller that controls ESC leakage current based upon the foresee signal. If the foresee signal is outside a prescribed range, control is exercised so as to reduce the absolute value of the electrostatic adsorption voltage, thereby suppressing the occurrence of an abnormal discharge.
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