Semiconductor memory device
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United States of America Patent
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Jul 19, 2011
Grant Date -
Jul 24, 2008
app pub date -
Jan 14, 2008
filing date -
Jan 15, 2007
priority date (Note) -
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Abstract
The semiconductor device includes a substrate having a conductive layer formed on its surface. The conductive layer has a columnar semiconductor formed thereon. The columnar semiconductor has an insulating layer formed therearound. The insulating layer has an electrode film formed therearound. The electrode film functions as an gate electrode of a transistor. The electrode film includes an laminate of two or more conductive films having different work functions.
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