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Abstract

An optoelectronic component comprises a first electrode (3), a radiation-emitting layer sequence (1) having an active region (10) on the first electrode (3), which region has a main extension plane (E) with a surface normal (N) and emits an electromagnetic primary radiation having a non-Lambertian emission characteristic, a second electrode (4) on the radiation-emitting layer sequence (1), said second electrode being transparent to the primary radiation, and a wavelength conversion layer (2) in the beam path of the primary radiation, which converts the primary radiation at least partly into an electromagnetic secondary radiation. In this case, the first electrode (3) is reflective to the primary radiation, the non-Lambertian emission characteristic is given by an intensity I(.alpha.) of the primary radiation of the radiation-emitting layer sequence (1) as a function of an emission angle .alpha. measured with respect to the surface normal (N), the intensity I(.alpha.) increases from a .alpha..gtoreq.0.degree. with increasing angle .alpha. up to a maximum angle .alpha..sub.max, and the conversion probability of the electromagnetic primary radiation in the wavelength conversion layer (2) increases as the emission angle .alpha. increases.

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