US Patent No: 7,982,505

Number of patents in Portfolio can not be more than 2000

Logic circuit, address decoder circuit and semiconductor memory

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ALSO PUBLISHED AS: 20100141301
ATTORNEY / AGENT: (SPONSORED)
 

Importance

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Abstract

Disclosed is a logic circuit includes a first NAND gate that receives a first pulse signal and a first selection signal, a first inverter gate that inverts an output signal of the first NAND gate to output a resulting signal, a second NAND gate that receives a second pulse signal and the first selection signal, a second inverter gate that inverts an output signal of the second NAND gate, a first PMOS transistor with a drain terminal connected to an output of the first NAND gate, a gate terminal connected to an output of the second NAND gate and a source terminal connected to a power supply voltage, and a first NMOS transistor with a drain terminal connected to an output of the first inverter gate, a gate terminal connected to an output of the second inverter gate and a source terminal connected to a ground potential.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NEC CORPORATIONTOKYO17429

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Takeda, Koichi Kawasaki, JP 90 412

Cited Art

Patent Info (Count) # Cites Year
 
MICRON TECHNOLOGY, INC. (3)
5,923,604 Method and apparatus for anticipatory selection of external or internal addresses in a synchronous memory device 8 1997
6,552,940 Sacrifice read test mode 2 2000
6,781,901 Sacrifice read test mode 2 2003
 
FUJITSU SEMICONDUCTOR LIMITED (2)
6,198,686 Memory device having row decoder 10 2000
7,002,875 Semiconductor memory 4 2004
 
MITSUBISHI DENKI KABUSHIKI KAISHA (2)
6,049,488 Clock synchronous semiconductor memory device capable of preventing outputting of invalid data 8 1998
6,243,320 Synchronous semiconductor memory device capable of selecting column at high speed 16 1999
 
ROUND ROCK RESEARCH, LLC (2)
5,793,688 Method for multiple latency synchronous dynamic random access memory 44 1997
5,850,368 Burst EDO memory address counter 55 1997
 
ADVANCED MICRO DEVICES, INC. (1)
6,081,136 Dynamic NOR gates for NAND decode 10 1997
 
CYPRESS SEMICONDUCTOR CORPORATION (1)
6,005,814 Test mode entrance through clocked addresses 44 1998
 
ELPIDA MEMORY, INC. (1)
6,654,302 Semiconductor memory device with a self refresh mode 3 2002
 
FREESCALE SEMICONDUCTOR, INC. (1)
7,362,134 Circuit and method for latch bypass 1 2006
 
FUJITSU LIMITED (1)
6,707,740 Semiconductor memory 3 2002
 
HITACHI MAXELL, LTD. (1)
5,550,781 Semiconductor apparatus with two activating modes of different number of selected word lines at refreshing 37 1995
 
SEIKO EPSON CORPORATION (1)
6,914,545 Circuitry and methods for reducing run-length of encoded data 8 2004
 
SONY CORPORATION (1)
5,883,529 Function clock generation circuit and D-type flip-flop equipped with enable function and memory circuit using same 28 1997
 
SUN MICROSYSTEMS, INC. (1)
6,452,423 Circuit for avoiding contention in one-hot or one-cold multiplexer designs 8 2000

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