Integrated single-crystal MEMS device
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United States of America Patent
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Jul 19, 2011
Grant Date -
Nov 12, 2009
app pub date -
Jun 14, 2007
filing date -
Jun 29, 2006
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Abstract
Method of manufacturing a MEMS device integrated in a silicon substrate. In parallel to the manufacturing of the MEMS device passive components as trench capacitors with a high capacitance density can be processed. The method is especially suited for MEMS resonators with resonance frequencies in the range of 10 MHz.
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