Selective deposition of noble metal thin films
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United States of America Patent
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Jul 26, 2011
Grant Date -
Jun 3, 2010
app pub date -
Dec 30, 2009
filing date -
Mar 15, 2005
priority date (Note) -
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Abstract
Processes are provided for selectively depositing thin films comprising one or more noble metals on a substrate by vapor deposition processes. In some embodiments, atomic layer deposition (ALD) processes are used to deposit a noble metal containing thin film on a high-k material, metal, metal nitride or other conductive metal compound while avoiding deposition on a lower k insulator such as silicon oxide. The ability to deposit on a first surface, such as a high-k material, while avoiding deposition on a second surface, such as a silicon oxide or silicon nitride surface, may be utilized, for example, in the formation of a gate electrode.
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