US Patent No: 7,985,680
Number of patents in Portfolio can not be more than 2000
Method of forming aluminum-doped metal carbonitride gate electrodes
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Jul 26, 2011
Issued date -
Aug 25, 2008
filing date -
12/197,756
serial no -
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Abstract
A method for forming an aluminum-doped metal (tantalum or titanium) carbonitride gate electrode for a semiconductor device is described. The method includes providing a substrate containing a dielectric layer thereon, and forming the gate electrode on the dielectric layer in the absence of plasma. The gate electrode is formed by depositing a metal carbonitride film, and adsorbing an atomic layer of an aluminum precursor on the metal carbonitride film. The steps of depositing and adsorbing may be repeated a desired number of times until the aluminum-doped metal carbonitride gate electrode has a desired thickness.
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International Classification(s)
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Cited Art
| Patent Info | (Count) | # Cites | Year |
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| 2005/0221,021 Method and system for performing atomic layer deposition | 7 | 2004 | |
| 2006/0210,723 Plasma enhanced atomic layer deposition system and method | 5 | 2005 | |
| 2006/0211,224 Plasma enhanced atomic layer deposition system and method | 12 | 2005 | |
| 2006/0211,243 Deposition system and method | 8 | 2005 | |
| 2006/0213,437 Plasma enhanced atomic layer deposition system | 8 | 2005 | |
| 2007/0116,887 Method and system for performing plasma enhanced atomic layer deposition | 7 | 2005 | |
| 2007/0116,888 Method and system for performing different deposition processes within a single chamber | 6 | 2005 | |
| 2007/0218,704 Method of light enhanced atomic layer deposition | 2 | 2006 | |
| 2007/0231,487 Method of forming a metal carbide or metal carbonitride film having improved adhesion | 3 | 2006 | |
| 2008/0141,937 METHOD AND SYSTEM FOR CONTROLLING A VAPOR DELIVERY SYSTEM | 2 | 2006 | |
| 2007/0251,445 Method for Depositing a Barrier Layer on a Low Dielectric Constant Material | 5 | 2007 | |
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| 2002/0192,952 Plasma treatment of tantalum nitride compound films formed by chemical vapor deposition | 10 | 2002 | |
| 2006/0251,872 Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof | 19 | 2005 | |
| 2007/0059,502 Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer | 30 | 2006 | |
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| 7,098,131 Methods for forming atomic layers and thin films including tantalum nitride and devices including the same | 18 | 2004 | |
| 2007/0059,929 Method of forming a tantalum carbon nitride layer and method of manufacturing a semiconductor device using the same | 10 | 2006 | |
| 2008/0164,581 ELECTRONIC DEVICE AND PROCESS FOR MANUFACTURING THE SAME | 6 | 2008 | |
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| 6,445,023 Mixed metal nitride and boride barrier layers | 107 | 1999 | |
| 2005/0179,097 Atomic layer deposition of CMOS gates with variable work functions | 8 | 2005 | |
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| 2005/0124,154 Method of forming copper interconnections for semiconductor integrated circuits on a substrate | 40 | 2004 | |
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| 6,861,334 Method of fabricating trench isolation structures for integrated circuits using atomic layer deposition | 28 | 2001 | |
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| 6,444,263 Method of chemical-vapor deposition of a material | 41 | 2000 | |
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| 2009/0325,372 Method of manufacturing semiconductor device and substrate processing apparatus | 1 | 2009 | |
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| 6,583,052 Method of fabricating a semiconductor device having reduced contact resistance | 29 | 2001 | |
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| 2006/0267,205 Integrated circuit arrangement with layer stack, and process | 3 | 2006 | |
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| 2007/0075,427 Amine-free deposition of metal-nitride films | 2 | 2005 | |
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| 7,186,446 Plasma enhanced ALD of tantalum nitride and bilayer | 4 | 2003 | |
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| 6,593,484 TANTALUM TERTIARY AMYLIMIDO TRIS (DIMETHYLAMIDE), A PROCESS FOR PRODUCING THE SAME, A SOLUTION OF STARTING MATERIAL FOR MOCVD USING THE SAME, AND A METHOD OF FORMING A TANTALUM NITRIDE FILM USING THE SAME | 85 | 2001 | |
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| 6,630,201 Adsorption process for atomic layer deposition | 180 | 2001 | |
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| 6,770,560 Method of forming metal wiring | 5 | 2003 | |
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| 6,979,856 Semiconductor memory device and control method and manufacturing method thereof | 9 | 2003 | |
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| 2006/0113,675 Barrier material and process for Cu interconnect | 30 | 2004 | |
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| 2008/0132,050 Deposition process for graded cobalt barrier layers | 4 | 2006 | |
Patent Citation Ranking
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| 3.5 Year Payment | $1600.00 | $800.00 | $400.00 | Jan 26, 2015 |
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