Hydrogen sensor
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United States of America Patent
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Aug 9, 2011
Grant Date -
May 17, 2007
app pub date -
Aug 25, 2006
filing date -
Aug 25, 2005
priority date (Note) -
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Abstract
A novel, resistance-based porous silicon sensor with Pd nano structures as the hydrogen sensing layer is presented. The sensor operates at room temperature. The hydrogen sensor of the present includes a p-Type Si substrate that is subjected to porous Si etching to form a nanoporous substrate. The substrate is then coated with a thin layer of Pd and annealed at 900 degrees C. This results in some Pd getting oxidized on porous Si and a thin PdO layer forms on the surface of the substrate. The sensor in accordance with the present invention exhibits an inverse relationship between increased hydrogen concentration versus resistance.
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