Silicon carbide gas distribution plate and RF electrode for plasma etch chamber
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United States of America Patent
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Aug 9, 2011
Grant Date -
Aug 28, 2008
app pub date -
Mar 21, 2007
filing date -
Feb 27, 2007
priority date (Note) -
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Abstract
A showerhead for use in a capacitively-coupled plasma chamber and made of low resistivity bulk layer coated with CVD SiC. The bulk low resitivity material may be, for example, graphite, Silicon Carbide (SiC), converted graphite, SiC+C, etc. Sintered SiC may be used as the bulk material coated with CVD SiC to provide a showerhead that is suitable for use in a capacitively-coupled plasma chamber.
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