Electrically isolated gated diode nonvolatile memory

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United States of America Patent

PATENT NO 7995384
APP PUB NO 20100039867A1
SERIAL NO

12192797

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Abstract

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A gated diode nonvolatile memory cell with a charge storage structure includes a diode structure with an additional gate terminal. Adjacent memory devices are electrically isolated. Example embodiments include the individual memory cell, an array of such memory cells, methods of operating the memory cell or array of memory cells, and methods of manufacturing the same.

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Patent Owner(s)

  • MACRONIX INTERNATIONAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Jyun-Siang Chiayi, TW 24 215
Ou, Tien-Fan Taipei, TW 11 75
Tsai, Wen-Jer Hualien County, TW 97 833

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