US Patent No: 8,004,082

Number of patents in Portfolio can not be more than 2000

Electronic component formed with barrier-seed layer on base material

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ALSO PUBLISHED AS: 20110006426
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Importance

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Abstract

It is an object of the present invention to provide a technology for forming an ULSI fine copper wiring by a simpler method. An electronic component in which a thin alloy film of tungsten and a noble metal used as a barrier-seed layer for an ULSI fine copper wiring is formed on a base material, wherein the thin alloy film has a composition comprising tungsten at a ratio equal to or greater than 60 at. % and the noble metal at a ratio of equal to or greater than 5 at. % and equal to or less than 40 at. %. The noble metal is preferably one or more kinds of metals selected from the group consisting of platinum, gold, silver and palladium.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
NIPPON MINING & METALS CO., LTD.TOKYO104

International Classification(s)

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  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Imori, Toru Ibaraki, JP 61 88
Sekiguchi, Junnosuke Kitaibaraki, JP 42 40

Cited Art

Patent Info (Count) # Cites Year
 
Electric Power Research Institute, Inc. (2)
5,417,821 Detection of fluids with metal-insulator-semiconductor sensors 42 1993
5,591,321 Detection of fluids with metal-insulator-semiconductor sensors 21 1995
 
BOARD OF REGENTS, THE UNIVERSITY OF TEXAS SYSTEM (1)
5,292,558 Process for metal deposition for microelectronic interconnections 65 1991
 
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. (1)
2009/0233,441 INTERCONNECTIONS FOR INTEGRATED CIRCUITS 1 2008
 
FUJI PHOTO FILM CO., LTD. (1)
4,613,404 Materials which exhibit a surface active effect with vacuum baked photoresists and method of using the same 8 1984
 
INTERSIL CORPORATION (1)
4,996,116 Enhanced direct bond structure 28 1989
 
MEDTRONIC, INC. (1)
5,855,995 Ceramic substrate for implantable medical devices 54 1997
 
MITSUBISHI DENKI KABUSHIKI KAISHA (1)
5,382,817 Semiconductor device having a ferroelectric capacitor with a planarized lower electrode 61 1993
 
NEC CORPORATION (1)
2010/0096,756 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 2 2008

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