Electronic component formed with barrier-seed layer on base material
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United States of America Patent
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Aug 23, 2011
Grant Date -
Jan 13, 2011
app pub date -
Feb 19, 2009
filing date -
Mar 19, 2008
priority date (Note) -
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Abstract
It is an object of the present invention to provide a technology for forming an ULSI fine copper wiring by a simpler method. An electronic component in which a thin alloy film of tungsten and a noble metal used as a barrier-seed layer for an ULSI fine copper wiring is formed on a base material, wherein the thin alloy film has a composition comprising tungsten at a ratio equal to or greater than 60 at. % and the noble metal at a ratio of equal to or greater than 5 at. % and equal to or less than 40 at. %. The noble metal is preferably one or more kinds of metals selected from the group consisting of platinum, gold, silver and palladium.
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