Different thickness oxide silicon nanowire field effect transistors
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United States of America Patent
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Aug 30, 2011
Grant Date -
Jun 9, 2011
app pub date -
Dec 4, 2009
filing date -
Dec 4, 2009
priority date (Note) -
Expired
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Abstract
A method (that produces a structure) patterns at least two wires of semiconductor material such that a first wire of the wires has a larger perimeter than a second wire of the wires. The method performs an oxidation process simultaneously on the wires to form a first gate oxide on the first wire and a second gate oxide on the second wire. The first gate oxide is thicker than the second gate oxide. The method also forms gate conductors over the first gate oxide and the second gate oxide, forms sidewall spacers on the gate conductors, and dopes portions of the first wire and the second wire not covered by the sidewall spacers and the gate conductors to form source and drain regions within the first wire and the second wire.
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