Method for fabricating semiconductor device with an intermediate stack structure

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United States of America Patent

PATENT NO 8008178
APP PUB NO 20080160746A1
SERIAL NO

11952128

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Abstract

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A method for fabricating a semiconductor device includes forming a first conductive layer over a substrate, forming an intermediate structure over the first conductive layer, the intermediate structure formed in a stack structure comprising at least a first metal layer and a nitrogen containing metal silicide layer, and forming a second conductive layer over the intermediate structure.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
HYNIX SEMICONDUCTOR INC.KYOUNGKI-DO3939

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cho, Heung-Jae Ichon-shi, KR 71 626
Kim, Tae-Kyung Ichon-shi, KR 132 437
Kim, Yong-Soo Ichon-shi, KR 70 526
Lim, Kwan-Yong Ichon-shi, KR 105 551
Sung, Min-Gyu Ichon-shi, KR 36 199
Yang, Hong-Seon Ichon-shi, KR 31 171

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